Manufacturer Part Number
DMN3009SK3-13
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel enhancement-mode field-effect transistor (FET) in a TO-252 (D-Pak) package
Product Features and Performance
Low on-resistance for efficient power conversion
High current handling capability up to 80A
Wide operating temperature range from -55°C to 150°C
Low gate charge for fast switching
Low input capacitance for high-frequency operation
Rugged design for reliable performance
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Wide temperature range for use in diverse environments
Fast switching performance for high-frequency applications
Robust design for reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.5mΩ @ 30A, 10V
Continuous Drain Current (Id): 80A @ 25°C
Input Capacitance (Ciss): 2000pF @ 15V
Power Dissipation (Pd): 3.4W @ 25°C
Quality and Safety Features
RoHS3 compliant
Meets international quality and safety standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Electric vehicles
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Wide temperature range for use in diverse environments
Fast switching performance for high-frequency applications
Robust design for reliable operation
Compliance with international quality and safety standards