DMN3008SCP10-7 - Diodes Incorporated

Manufacturer Part Number

DMN3008SCP10-7

Manufacturer

Diodes Incorporated

Introduction

High-performance N-channel MOSFET transistor for power management and control applications

Product Features and Performance

Superior RDS(on) performance for low power loss

High-speed switching with fast turn-on and turn-off times

Robust design with high drain-to-source breakdown voltage

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable performance in high-temperature environments

Suitable for various power management and control applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (RDS(on)): 7.8mΩ @ 7A, 10V

Continuous Drain Current (ID): 14.6A @ 25°C

Input Capacitance (Ciss): 1476pF @ 15V

Power Dissipation (Pd): 2.7W

Quality and Safety Features

RoHS3 compliant

Manufactured using robust MOSFET technology

Tested and qualified for reliable operation

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Switching regulators

Automotive electronics

Industrial automation

Product Lifecycle

Currently in active production

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Reliable performance in high-temperature environments

Suitable for a variety of power management and control applications

Manufactured using robust and reliable MOSFET technology

Availability of replacement or upgrade options if required