Manufacturer Part Number
DMN21D2UFB-7B
Manufacturer
Diodes Incorporated
Introduction
The DMN21D2UFB-7B is a N-channel MOSFET transistor from Diodes Incorporated, designed for a variety of power management and control applications.
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±12V Gate-Source Voltage (Vgs)
990mOhm On-Resistance (Rds(on)) at 100mA, 4.5V
760mA Continuous Drain Current (Id) at 25°C
6pF Input Capacitance (Ciss) at 16V
380mW Power Dissipation (Pd) at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Efficient power management with low on-resistance
Suitable for a wide range of operating voltages
Compact surface mount package for space-constrained designs
Robust operating temperature range
Key Technical Parameters
Transistor Type: N-Channel MOSFET
Threshold Voltage (Vgs(th)): 1V at 250μA
Drive Voltage Range: 1.5V to 4.5V
Gate Charge (Qg): 0.93nC at 10V
Quality and Safety Features
RoHS3 compliant
Reliable performance over extended temperature range
Compatibility
Suitable for various power management, control, and switching applications
Application Areas
Power supplies
Motor drives
Switch-mode power supplies
Battery-powered devices
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacements or upgrades may become available in the future
Key Reasons to Choose This Product
Efficient power management with low on-resistance
Wide operating voltage and temperature range
Compact surface mount package for space-constrained designs
Reliable performance and RoHS3 compliance