Manufacturer Part Number
DMN2050LFDB-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel Enhancement-Mode MOSFET
Product Features and Performance
20V Drain-Source Voltage
45mΩ On-Resistance
3A Continuous Drain Current
Logic Level Gate
Low Input Capacitance
Low Gate Charge
Operating Temperature Range: -55°C to 150°C
Product Advantages
Compact 6-UDFN package
Suitable for high-efficiency power conversion circuits
Optimized for low-power, space-constrained applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 45mΩ
Continuous Drain Current (Id): 3.3A
Input Capacitance (Ciss): 389pF
Gate Charge (Qg): 12nC
Gate Threshold Voltage (Vgs(th)): 1V
Quality and Safety Features
RoHS3 Compliant
Designed for reliable performance and safety
Compatibility
Suitable for surface mount applications
Application Areas
High-efficiency power conversion circuits
Low-power, space-constrained applications
Product Lifecycle
This product is currently in production and widely available.
Several Key Reasons to Choose This Product
Excellent performance-to-size ratio
Optimized for low-power, space-constrained designs
Reliable and safe operation across a wide temperature range
Easy integration into surface mount solutions
Availability and long-term support from a reputable manufacturer