Manufacturer Part Number
DMN2029USD-13
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET with low on-resistance and logic level gate
Product Features and Performance
Dual N-channel MOSFET in an 8-SOIC package
Low on-resistance of 25 mΩ
Continuous drain current of 5.8 A at 25°C
Logic level gate with 1.5 V threshold
Wide operating temperature range of -55°C to 150°C
Input capacitance of 1171 pF at 10 V
Gate charge of 18.6 nC at 8 V
Product Advantages
Compact and efficient dual MOSFET design
Suitable for low-voltage, high-current applications
Logic level gate for easy driving
Robust thermal performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 20 V
On-resistance (Rds(on)): 25 mΩ
Continuous drain current (Id): 5.8 A
Input capacitance (Ciss): 1171 pF
Gate charge (Qg): 18.6 nC
Operating temperature range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for tape and reel packaging
Compatibility
Suitable for a wide range of low-voltage, high-current applications, such as:
DC-DC converters
Motor drives
Power supplies
Switching regulators
Application Areas
Power management
Motor control
Industrial automation
Consumer electronics
Product Lifecycle
This product is currently in production and available. No discontinuation or end-of-life plans have been announced.
Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Compact dual MOSFET design in a space-saving 8-SOIC package
Logic level gate for easy, efficient driving
Wide operating temperature range and robust thermal performance
RoHS3 compliance for environmentally-conscious applications