Manufacturer Part Number
DMG9926UDM-7
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET transistor with low on-resistance and logic-level gate for efficient power switching applications.
Product Features and Performance
Dual N-Channel MOSFET configuration
Low on-resistance of 28 mOhm @ 8.2A, 4.5V
High continuous drain current of 4.2A
Wide operating temperature range of -55°C to 150°C
Input capacitance of 856 pF @ 10V
Gate charge of 8.3 nC @ 4.5V
Suitable for logic-level gate drive
Product Advantages
Efficient power switching
Compact surface-mount package
Reliable performance across temperature range
Optimized for low power consumption
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 4.2A
On-Resistance (Rds(on)): 28 mOhm
Input Capacitance (Ciss): 856 pF
Gate Charge (Qg): 8.3 nC
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with standard surface-mount assembly processes
Application Areas
Power management circuits
Motor control
Switch-mode power supplies
General-purpose power switching
Product Lifecycle
Currently in production
No discontinuation or replacement plans identified
Several Key Reasons to Choose This Product
Excellent efficiency and low power loss due to low on-resistance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for reliable performance
Logic-level gate for easy microcontroller integration
RoHS compliance for environmental safety