DMG8822UTS-13 - Diodes Incorporated

Manufacturer Part Number

DMG8822UTS-13

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel MOSFET Array in 8-TSSOP Package

Product Features and Performance

2 N-Channel (Dual) Common Drain MOSFETs

Drain to Source Voltage (Vdss) of 20V

Low On-Resistance (Rds(on)) of 25mΩ @ 8.2A, 4.5V

Continuous Drain Current (Id) of 4.9A @ 25°C

Input Capacitance (Ciss) of 841pF @ 10V

Gate Threshold Voltage (Vgs(th)) of 900mV @ 250μA

Gate Charge (Qg) of 9.6nC @ 4.5V

Operating Temperature Range of -55°C to 150°C

Product Advantages

Compact 8-TSSOP package

Low on-resistance for improved efficiency

High current handling capability

Suitable for automotive and industrial applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 25mΩ @ 8.2A, 4.5V

Continuous Drain Current (Id): 4.9A @ 25°C

Input Capacitance (Ciss): 841pF @ 10V

Gate Threshold Voltage (Vgs(th)): 900mV @ 250μA

Gate Charge (Qg): 9.6nC @ 4.5V

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for a wide range of electronic devices and circuits

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Motor control applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available, but the specific details are not provided.

Key Reasons to Choose This Product

Compact 8-TSSOP package for space-constrained designs

Low on-resistance for improved efficiency and power savings

High current handling capability for demanding applications

Wide operating temperature range for use in harsh environments

RoHS3 compliance and AEC-Q101 qualification for automotive and industrial use