Manufacturer Part Number
DMG4800LSD-13
Manufacturer
Diodes Incorporated
Introduction
The DMG4800LSD-13 is a dual N-channel MOSFET array from Diodes Incorporated, designed for a wide range of applications.
Product Features and Performance
30V drain-to-source voltage
16mOhm maximum on-resistance at 9A, 10V
5A continuous drain current at 25°C
798pF maximum input capacitance at 10V
56nC maximum gate charge at 5V
Logic-level gate threshold voltage of 1.6V at 250μA
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact 8-SOIC surface mount package
Excellent performance-to-cost ratio
Suitable for power management and switching applications
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 16mOhm
Continuous Drain Current (Id): 7.5A
Input Capacitance (Ciss): 798pF
Gate Charge (Qg): 8.56nC
Gate Threshold Voltage (Vgs(th)): 1.6V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power management circuits
Switching applications
Motor control
Lighting
Industrial automation
Product Lifecycle
Currently in active production
Replacement or upgrade options available from Diodes Incorporated
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and space-saving surface mount package
Wide operating temperature range
Robust and reliable design
Suitable for a variety of power management and switching applications