Manufacturer Part Number
DMG4468LK3-13
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET transistor suitable for a variety of power management and switching applications.
Product Features and Performance
30V drain-to-source voltage rating
Low on-resistance of 16mOhm
Continuous drain current of 9.7A at 25°C
Fast switching speed and low gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
Compact surface-mount package
Reliable performance across wide temperature range
Suitable for high-current, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 16mOhm
Continuous Drain Current (Id): 9.7A
Input Capacitance (Ciss): 867pF
Power Dissipation: 1.68W
Quality and Safety Features
RoHS3 compliant
Durable TO-252-3 package
Compatibility
Suitable for a wide range of power management, switching, and control applications
Application Areas
Power supplies
Motor drives
Lighting and industrial control systems
Telecommunications equipment
Consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
Wide operating temperature range and reliable performance
Compact surface-mount package for space-constrained designs
Suitable for high-current, high-frequency applications
RoHS3 compliance for environmental responsibility