Manufacturer Part Number
DMG3415UFY4Q-7
Manufacturer
Diodes Incorporated
Introduction
A P-channel MOSFET transistor with low on-resistance and high power dissipation capability.
Product Features and Performance
Low on-resistance of 39 mOhm @ 4A, 4.5V
High continuous drain current of 2.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 10 nC @ 4.5V
Low input capacitance of 282 pF @ 10V
Product Advantages
Excellent power efficiency due to low on-resistance
Suitable for high power and high current applications
Robust design for wide temperature operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 16V
Vgs (Max): ±8V
Power Dissipation (Max): 650mW
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Surface mount package (X2-DFN2015-3)
Compatible with standard MOSFET drivers and controllers
Application Areas
Power management circuits
Motor control systems
Switching power supplies
Battery chargers
Product Lifecycle
This product is an active and widely available part
No plans for discontinuation, and suitable replacement options exist
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Wide operating temperature range for reliable operation
Fast switching capability for high-speed applications
Robust design for demanding power electronics systems
Compatibility with standard MOSFET drivers and controllers
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