Manufacturer Part Number
DMC6040SSD-13
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel and P-Channel MOSFET Array
Product Features and Performance
N and P-Channel MOSFET configuration
60V Drain-Source Voltage (Vdss)
40mΩ maximum On-Resistance (Rds(on)) at 8A, 10V
1A/3.1A Continuous Drain Current (Id) at 25°C
1130pF maximum Input Capacitance (Ciss) at 15V
8nC maximum Gate Charge (Qg) at 10V
Logic Level Gate (Vgs(th) ≤ 3V at 250μA)
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Efficient power management
Small footprint
Robust and reliable performance
Suitable for a variety of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 40mΩ
Continuous Drain Current (Id): 5.1A/3.1A
Input Capacitance (Ciss): 1130pF
Gate Charge (Qg): 20.8nC
Gate Threshold Voltage (Vgs(th)): ≤ 3V
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Surface Mount (8-SOIC)
Tape and Reel Packaging
Application Areas
Power Management Circuits
Switch-Mode Power Supplies
Motor Drivers
Lighting Controls
Industrial and Consumer Electronics
Product Lifecycle
Currently in production
No discontinuation or replacement plans identified
Key Reasons to Choose This Product
Efficient power management with low on-resistance
Small and compact surface mount package
Wide operating temperature range for reliable performance
Logic level gate for easy drive circuit design
Suitable for a variety of power management and control applications