Manufacturer Part Number
DMC4029SK4-13
Manufacturer
Diodes Incorporated
Introduction
The DMC4029SK4-13 is a N- and P-channel complementary metal-oxide-semiconductor field-effect transistor (MOSFET) array from Diodes Incorporated.
Product Features and Performance
Nand P-channel complementary MOSFET configuration
40V drain-to-source voltage rating
24mΩ maximum on-resistance at 6A, 10V
3A continuous drain current at 25°C
1060pF maximum input capacitance at 20V
3V maximum gate threshold voltage at 250μA
1nC maximum gate charge at 20V
Product Advantages
Complementary Nand P-channel configuration for versatile applications
Low on-resistance for efficient power switching
High continuous drain current rating
Low input capacitance for fast switching
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40V
On-Resistance (RDS(on)): 24mΩ @ 6A, 10V
Continuous Drain Current (ID): 8.3A @ 25°C
Input Capacitance (Ciss): 1060pF @ 20V
Gate Threshold Voltage (VGS(th)): 3V @ 250μA
Gate Charge (Qg): 19.1nC @ 20V
Quality and Safety Features
RoHS3 compliant
TO-252-4L package
Compatibility
Surface mount package (TO-252-4L)
Compatible with standard MOSFET driver circuits
Application Areas
General-purpose power switching
Motor control
Power supply circuits
Amplifier circuits
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Complementary Nand P-channel configuration for versatile applications
Low on-resistance for efficient power switching
High continuous drain current rating
Low input capacitance for fast switching
RoHS3 compliance for environmental safety
Widely compatible surface mount package
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