Manufacturer Part Number
DMC3028LSD-13
Manufacturer
Diodes Incorporated
Introduction
The DMC3028LSD-13 is a dual N-channel and P-channel enhancement-mode power MOSFET from Diodes Incorporated, designed for efficient power switching applications.
Product Features and Performance
N and P-Channel MOSFET configuration
30V Drain-to-Source Voltage (Vdss)
28mΩ maximum on-resistance (RDS(on)) at 6A, 10V
6A/6.8A continuous drain current (ID) at 25°C
472pF maximum input capacitance (Ciss) at 15V
Logic-level gate drive (Vgs(th) ≤ 3V at 250μA)
5nC maximum gate charge (Qg) at 10V
Product Advantages
Efficient power switching performance
Low on-resistance for low conduction losses
Logic-level gate drive for easy microcontroller interfacing
Compact 8-SOIC surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (RDS(on)): 28mΩ @ 6A, 10V
Drain Current (ID): 6.6A/6.8A @ 25°C
Input Capacitance (Ciss): 472pF @ 15V
Gate Threshold Voltage (Vgs(th)): ≤ 3V @ 250μA
Gate Charge (Qg): 10.5nC @ 10V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switching power supplies
Motor drives
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Efficient power switching performance
Low on-resistance for low conduction losses
Logic-level gate drive for easy microcontroller interfacing
Compact 8-SOIC surface-mount package
Suitable for a wide range of power switching applications
RoHS3 compliant and wide operating temperature range
DMC3035LSD-13Diodes IncorporatedMOSFET N/P-CH 30V 6.9A/5A 8-SOIC