DMC1028UFDB-7 - Diodes Incorporated

Manufacturer Part Number

DMC1028UFDB-7

Manufacturer

Diodes Incorporated

Introduction

This product is a discrete semiconductor device, specifically a transistor with N and P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) configuration.

Product Features and Performance

Drain to Source Voltage (Vdss) of 12V and 20V

Low On-Resistance (Rds On) of 25mOhm @ 5.2A, 4.5V

Continuous Drain Current (Id) of 6A @ 25°C and 3.4A

Input Capacitance (Ciss) of 787pF @ 6V

Gate Threshold Voltage (Vgs(th)) of 1V @ 250A

Gate Charge (Qg) of 18.5nC @ 8V

Wide Operating Temperature Range of -55°C to 150°C (TJ)

Maximum Power Dissipation of 1.36W

Product Advantages

High current handling capability

Low on-resistance for efficient power conversion

Compact surface mount package

Wide temperature range for diverse applications

Key Technical Parameters

Drain to Source Voltage (Vdss)

On-Resistance (Rds On)

Continuous Drain Current (Id)

Input Capacitance (Ciss)

Gate Threshold Voltage (Vgs(th))

Gate Charge (Qg)

Operating Temperature Range

Maximum Power Dissipation

Quality and Safety Features

RoHS3 compliant

U-DFN2020-6 (Type B) package

Compatibility

Surface mount application

Application Areas

Power management circuits

DC-DC converters

Motor control

Industrial electronics

Automotive electronics

Product Lifecycle

This product is currently in production and available. There are no indications of it being discontinued or reaching end-of-life. Replacement or upgrade options may be available from the manufacturer.

Several Key Reasons to Choose This Product

High current handling capability for power-intensive applications

Low on-resistance for efficient power conversion and minimized power losses

Compact surface mount package for space-constrained designs

Wide operating temperature range for use in diverse environmental conditions

RoHS3 compliance for environmentally-friendly applications