DGD05473FN-7 - Diodes Incorporated

Manufacturer Part Number

DGD05473FN-7

Manufacturer

Diodes Incorporated

Introduction

High-performance dual N-channel MOSFET gate driver

Designed for driving power MOSFET or IGBT gates in power conversion applications

Product Features and Performance

Independent dual-channel gate driver

Wide supply voltage range: 0.3V to 60V

Input logic compatible with CMOS/TTL

Fast rise/fall times: 16ns/12ns

High peak output current: 1.5A source, 2.5A sink

High side voltage capability up to 50V (bootstrap)

Thermal shutdown protection

Small package: 10-WFDFN Exposed Pad

Product Advantages

Compact size and high power density

Robust and reliable performance

Easy to integrate in power conversion designs

Flexible and versatile for various applications

Key Technical Parameters

Voltage Supply: 0.3V to 60V

Channel Type: Independent

Number of Drivers: 2

Logic Voltage VIL, VIH: 0.8V, 2.4V

Driven Configuration: Half-Bridge

Gate Type: N-Channel MOSFET

Rise / Fall Time (Typ): 16ns, 12ns

Current Peak Output (Source, Sink): 1.5A, 2.5A

High Side Voltage Max (Bootstrap): 50V

Quality and Safety Features

Thermal shutdown protection

RoHS3 compliant

Compatibility

Compatible with a wide range of power MOSFET and IGBT devices

Application Areas

Power conversion applications

Motor control

Switching power supplies

Industrial automation

Automotive electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Robust and reliable performance

Compact size and high power density

Flexible and versatile for various applications

Easy to integrate in power conversion designs

Thermal shutdown protection for enhanced safety