Manufacturer Part Number
DGD05473FN-7
Manufacturer
Diodes Incorporated
Introduction
High-performance dual N-channel MOSFET gate driver
Designed for driving power MOSFET or IGBT gates in power conversion applications
Product Features and Performance
Independent dual-channel gate driver
Wide supply voltage range: 0.3V to 60V
Input logic compatible with CMOS/TTL
Fast rise/fall times: 16ns/12ns
High peak output current: 1.5A source, 2.5A sink
High side voltage capability up to 50V (bootstrap)
Thermal shutdown protection
Small package: 10-WFDFN Exposed Pad
Product Advantages
Compact size and high power density
Robust and reliable performance
Easy to integrate in power conversion designs
Flexible and versatile for various applications
Key Technical Parameters
Voltage Supply: 0.3V to 60V
Channel Type: Independent
Number of Drivers: 2
Logic Voltage VIL, VIH: 0.8V, 2.4V
Driven Configuration: Half-Bridge
Gate Type: N-Channel MOSFET
Rise / Fall Time (Typ): 16ns, 12ns
Current Peak Output (Source, Sink): 1.5A, 2.5A
High Side Voltage Max (Bootstrap): 50V
Quality and Safety Features
Thermal shutdown protection
RoHS3 compliant
Compatibility
Compatible with a wide range of power MOSFET and IGBT devices
Application Areas
Power conversion applications
Motor control
Switching power supplies
Industrial automation
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Robust and reliable performance
Compact size and high power density
Flexible and versatile for various applications
Easy to integrate in power conversion designs
Thermal shutdown protection for enhanced safety
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