Manufacturer Part Number
DDTC143TUA-7-F
Manufacturer
Diodes Incorporated
Introduction
NPN pre-biased bipolar junction transistor
Product Features and Performance
Low collector-emitter saturation voltage
High transition frequency of 250 MHz
Low collector cutoff current of 500 nA
Wide collector-emitter breakdown voltage of 50 V
Compact SOT-323 (SC-70) surface mount package
200 mW maximum power dissipation
Product Advantages
Optimized for high-speed switching applications
Suitable for use in audio, video, and RF circuits
Provides stable performance over temperature range
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 50 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 500 nA
DC Current Gain (hFE): 100 min @ 1 mA, 5 V
Transition Frequency (fT): 250 MHz
Base Resistor (R1): 4.7 kΩ
Quality and Safety Features
RoHS 3 compliant
Meets environmental and safety standards
Compatibility
Compatible with standard SOT-323 (SC-70) surface mount footprint
Application Areas
Suitable for use in audio, video, and RF circuits
Ideal for high-speed switching applications
Product Lifecycle
This product is an active, in-production device
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High-performance, pre-biased NPN transistor
Compact, space-saving SOT-323 (SC-70) package
Excellent high-frequency characteristics with 250 MHz transition frequency
Wide collector-emitter breakdown voltage of 50 V
Low collector-emitter saturation voltage for efficient operation
Stable performance over temperature range
RoHS 3 compliance for environmental responsibility