Manufacturer Part Number
DDTC143ECA-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single, Pre-Biased
Product Features and Performance
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 500 nA
Collector-Emitter Saturation Voltage: 300 mV @ 500 μA, 10 mA
DC Current Gain: 20 min. @ 10 mA, 5 V
Transition Frequency: 250 MHz
Base Resistor: 4.7 kΩ
Emitter-Base Resistor: 4.7 kΩ
Product Advantages
Pre-biased bipolar transistor for simplified circuit design
High-speed switching capabilities
Low saturation voltage for efficient power delivery
Wide voltage and current range support
Key Technical Parameters
Transistor Type: NPN, Pre-Biased
Packaging: SOT-23-3
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuit applications
Application Areas
Amplifiers
Switches
Logic gates
Buffers
Pull-up/pull-down circuits
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Pre-biased for simplified circuit design
High-speed switching performance
Wide voltage and current range support
Efficient power delivery with low saturation voltage
Small surface mount package for compact designs
RoHS3 compliance for environmentally-conscious applications