Manufacturer Part Number
DDTC123JCA-7-F
Manufacturer
Diodes Incorporated
Introduction
This is a pre-biased NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
Product Features and Performance
High-speed switching capability with a transition frequency of 250 MHz
Low collector-emitter saturation voltage (VCE(sat)) of 300 mV at 5 mA collector current
Integrated base and emitter resistors for biasing
Compact SOT-23-3 surface-mount package
Product Advantages
Simplified circuit design with pre-biased transistor
Improved reliability and performance compared to discrete transistor and resistor configurations
Small and space-efficient surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 50 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 500 nA
DC Current Gain (hFE): 80 min at 10 mA, 5 V
Quality and Safety Features
RoHS3 compliant
Suitable for lead-free and halogen-free assembly processes
Compatibility
Compatible with standard SOT-23-3 surface-mount footprints
Application Areas
General-purpose amplifier and switching circuits
Consumer electronics
Industrial control systems
Telecommunications equipment
Product Lifecycle
This product is an active and widely available component.
No known plans for discontinuation or major changes in the near future.
Key Reasons to Choose This Product
Simplified circuit design with integrated biasing
Reliable and high-performance switching capability
Compact and space-efficient surface-mount package
RoHS3 compliance for use in modern electronics
Widespread availability and compatibility