Manufacturer Part Number
DDTC114EUA-7-F
Manufacturer
Diodes Incorporated
Introduction
Pre-biased NPN bipolar junction transistor (BJT) suitable for a wide range of switching and amplification applications.
Product Features and Performance
Low collector-emitter saturation voltage for efficient switching
High transition frequency for high-speed switching
Pre-biased base-emitter junction for simplified biasing
Low collector cutoff current for improved leakage performance
Product Advantages
Simplified biasing circuitry
Efficient switching performance
High-speed switching capability
Reduced leakage for improved reliability
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 500 nA
DC Current Gain: 30 (min)
Transition Frequency: 250 MHz
Base Resistor: 10 kΩ
Emitter-Base Resistor: 10 kΩ
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in tape-and-reel packaging
Compatibility
Surface mount SOT-323 package
Interchangeable with other pre-biased NPN BJT transistors in similar packages
Application Areas
Switching and amplification circuits
Logic gates
Biasing and level shifting
General-purpose electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade parts available from Diodes Incorporated
Key Reasons to Choose This Product
Simplified biasing circuitry reduces design complexity
Efficient switching performance for power-sensitive applications
High-speed switching capability for high-frequency circuits
Reduced leakage current improves reliability
RoHS3 compliance for environmental responsibility
Surface mount packaging for automated assembly