Manufacturer Part Number
DDTC113ZCA-7-F
Manufacturer
Diodes Incorporated
Introduction
NPN Pre-Biased Bipolar Junction Transistor
Product Features and Performance
Low-noise operation
High operating frequency up to 250 MHz
Controlled base-emitter voltage for stable performance
Wide collector-emitter breakdown voltage up to 50 V
Compact SOT-23-3 surface mount package
Product Advantages
Optimized for switching and amplifying applications
Suitable for high-speed digital and analog circuits
Provides reliable and consistent performance
Miniature package enables compact PCB designs
Key Technical Parameters
Power rating: 200 mW
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 500 nA
Collector-emitter saturation voltage: 300 mV
DC current gain: 33 (min)
Transition frequency: 250 MHz
Base resistance: 1 kΩ
Emitter-base resistance: 10 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable performance in surface mount applications
Compatibility
Suitable for use in a wide range of electronic circuits and applications
Application Areas
Switching and amplifying in high-speed digital and analog circuits
RF and wireless communication equipment
Consumer electronics
Industrial control systems
Product Lifecycle
Current production model
Replacements and upgrades may be available
Key Reasons to Choose This Product
High-performance NPN pre-biased transistor for reliable and stable operation
Optimized for high-frequency switching and amplifying applications
Compact SOT-23-3 surface mount package for efficient PCB integration
RoHS3 compliance for use in environmentally-conscious designs
Proven reliability and consistency from a reputable manufacturer