DDTA143ECA-7-F - Diodes Incorporated

Manufacturer Part Number

DDTA143ECA-7-F

Manufacturer

Diodes Incorporated

Introduction

This is a PNP bipolar junction transistor (BJT) with a built-in base resistor for pre-biasing.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage of 50 V

Collector current (max) of 100 mA

Collector cutoff current (max) of 500 nA

Low collector-emitter saturation voltage of 300 mV @ 10 mA collector current

Minimum DC current gain of 20 @ 10 mA collector current, 5 V collector-emitter voltage

Transition frequency of 250 MHz

Built-in base resistors of 4.7 kΩ

Product Advantages

Pre-biased design simplifies circuit design

High frequency operation

Low saturation voltage for efficient power transfer

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Vce Saturation (Max) @ Ib, Ic: 300 mV @ 500 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10 mA, 5 V

Frequency Transition: 250 MHz

Resistor Base (R1): 4.7 kΩ

Resistor Emitter Base (R2): 4.7 kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package: SOT-23-3

Application Areas

Suitable for various electronic circuits and applications requiring a pre-biased PNP transistor, such as amplifiers, switches, and logic gates.

Product Lifecycle

This product is an active and available part from the manufacturer.

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

High frequency capability for high-speed applications

Low saturation voltage for efficient power transfer

RoHS compliance for environmental responsibility

Surface mount package for compact design