Manufacturer Part Number
DDTA123JCA-7-F
Manufacturer
Diodes Incorporated
Introduction
Pre-biased PNP bipolar junction transistor (BJT) for general-purpose amplifier and switching applications
Product Features and Performance
200 mW power dissipation
50 V collector-emitter breakdown voltage
100 mA maximum collector current
500 nA maximum collector cutoff current
300 mV maximum collector-emitter saturation voltage
80 minimum DC current gain
250 MHz transition frequency
2 kΩ base resistor
47 kΩ emitter-base resistor
Surface mount package
Product Advantages
Pre-biased for simplified circuit design
High frequency performance
Compact surface mount package
Suitable for general-purpose amplifier and switching applications
Key Technical Parameters
Power Dissipation: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 300 mV
DC Current Gain (Min): 80
Transition Frequency: 250 MHz
Base Resistor: 2.2 kΩ
Emitter-Base Resistor: 47 kΩ
Package: Surface Mount (SOT-23-3)
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package
Compatibility
Suitable for general-purpose amplifier and switching applications in electronic circuits
Application Areas
Amplifier circuits
Switching circuits
General-purpose electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Pre-biased for simplified circuit design
High frequency performance up to 250 MHz
Compact surface mount package for space-constrained applications
Reliable operation with 200 mW power dissipation
Suitable for a wide range of amplifier and switching applications