DDTA123JCA-7-F - Diodes Incorporated

Manufacturer Part Number

DDTA123JCA-7-F

Manufacturer

Diodes Incorporated

Introduction

Pre-biased PNP bipolar junction transistor (BJT) for general-purpose amplifier and switching applications

Product Features and Performance

200 mW power dissipation

50 V collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

300 mV maximum collector-emitter saturation voltage

80 minimum DC current gain

250 MHz transition frequency

2 kΩ base resistor

47 kΩ emitter-base resistor

Surface mount package

Product Advantages

Pre-biased for simplified circuit design

High frequency performance

Compact surface mount package

Suitable for general-purpose amplifier and switching applications

Key Technical Parameters

Power Dissipation: 200 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 300 mV

DC Current Gain (Min): 80

Transition Frequency: 250 MHz

Base Resistor: 2.2 kΩ

Emitter-Base Resistor: 47 kΩ

Package: Surface Mount (SOT-23-3)

Quality and Safety Features

RoHS3 compliant

Reliable surface mount package

Compatibility

Suitable for general-purpose amplifier and switching applications in electronic circuits

Application Areas

Amplifier circuits

Switching circuits

General-purpose electronics

Product Lifecycle

Current product, no discontinuation plans

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Pre-biased for simplified circuit design

High frequency performance up to 250 MHz

Compact surface mount package for space-constrained applications

Reliable operation with 200 mW power dissipation

Suitable for a wide range of amplifier and switching applications