DDTA114EUA-7-F - Diodes Incorporated

Manufacturer Part Number

DDTA114EUA-7-F

Manufacturer

Diodes Incorporated

Introduction

PNP Bipolar Junction Transistor (BJT) with Pre-Biased Base

Product Features and Performance

50V Collector-Emitter Breakdown Voltage

100mA Collector Current Capacity

500nA Collector Cutoff Current

300mV Collector-Emitter Saturation Voltage @ 10mA Collector Current

30 Minimum DC Current Gain @ 5mA Collector Current

250MHz Transition Frequency

10kΩ Base Resistor and 10kΩ Emitter-Base Resistor

Product Advantages

Pre-Biased Base for Simple Biasing

High Frequency Operation

Small SOT-323 Surface Mount Package

Compliant with RoHS 3 Directive

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V

Frequency Transition: 250MHz

Resistor Base (R1): 10kΩ

Resistor Emitter Base (R2): 10kΩ

Quality and Safety Features

RoHS 3 Compliant

Tape and Reel Packaging

Compatibility

Compatible with Standard PNP BJT Applications

Application Areas

Amplifiers

Switches

Logic Circuits

General Purpose Electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Pre-Biased base for simple circuit design

High frequency operation up to 250MHz

Small SOT-323 surface mount package

RoHS 3 compliance for environmentally-conscious applications

Wide voltage and current ratings for versatile use