BSS84Q-7-F - Diodes Incorporated

Manufacturer Part Number

BSS84Q-7-F

Manufacturer

Diodes Incorporated

Introduction

This product is a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for general-purpose applications.

Product Features and Performance

Low on-resistance (Rds(on)) of 10Ω at 100mA, 5V

High drain-to-source voltage (Vdss) of 50V

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 45pF at 25V

Low gate charge (Qg) of 0.59nC at 10V

Suitable for surface mount applications

Product Advantages

Efficient power handling and low power dissipation

Reliable and stable performance over a wide temperature range

Small package size and surface mount compatibility for compact designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 50V

Gate-to-Source Voltage (Vgs): ±20V

Drain Current (Id): 130mA

On-Resistance (Rds(on)): 10Ω at 100mA, 5V

Input Capacitance (Ciss): 45pF at 25V

Gate Charge (Qg): 0.59nC at 10V

Power Dissipation (Pd): 300mW

Quality and Safety Features

Meets industry-standard quality and reliability requirements

Compliant with relevant safety regulations and standards

Compatibility

Suitable for a wide range of electronic applications and circuits

Application Areas

General-purpose electronics

Power management circuits

Switching and control applications

Amplifier and driver circuits

Product Lifecycle

This product is an active and readily available part from the manufacturer.

Replacements and upgrades may be available as technology evolves.

Several Key Reasons to Choose This Product

Efficient power handling and low power dissipation

Reliable performance over a wide temperature range

Small package size and surface mount compatibility for compact designs

Meets industry-standard quality and reliability requirements

Suitable for a wide range of electronic applications and circuits