Manufacturer Part Number
BSS138DW-7-F
Manufacturer
Diodes Incorporated
Introduction
Dual N-Channel MOSFET in a compact SOT-363 package
Product Features and Performance
Dual N-Channel MOSFET
Low on-resistance (Rds(on)) of 3.5Ω @ 220mA, 10V
Logic level gate (Vgs(th) max of 1.5V @ 250μA)
Low input capacitance (Ciss) of 50pF @ 10V
Wide operating temperature range of -55°C to 150°C
Power rating of 200mW
Product Advantages
Compact SOT-363 package
Low on-resistance for efficient switching
Logic level gate for easy interfacing with microcontrollers
Wide temperature range for diverse applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 50V
Continuous Drain Current (Id): 200mA @ 25°C
On-Resistance (Rds(on)): 3.5Ω @ 220mA, 10V
Input Capacitance (Ciss): 50pF @ 10V
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Quality and Safety Features
RoHS3 compliant
Manufactured by Diodes Incorporated, a reputable semiconductor company
Compatibility
Suitable for surface mount applications
Application Areas
Low power switching circuits
Logic-level control applications
General-purpose electronic devices
Product Lifecycle
Currently in production
Replacement or upgrade options available from Diodes Incorporated
Several Key Reasons to Choose This Product
Compact and space-saving SOT-363 package
Low on-resistance for efficient switching performance
Logic level gate for easy microcontroller interfacing
Wide operating temperature range for diverse applications
Reputable manufacturer with quality and safety compliance