Manufacturer Part Number
BS870-7-F
Manufacturer
Diodes Incorporated
Introduction
This is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
60V Drain-Source Voltage
±20V Gate-Source Voltage
5Ω Maximum On-Resistance at 200mA, 10V
250mA Continuous Drain Current at 25°C
50pF Maximum Input Capacitance at 10V
300mW Maximum Power Dissipation at 25°C
3V Maximum Gate Threshold Voltage at 250μA
Product Advantages
Low on-resistance for efficient power switching
Wide operating voltage range
Surface mount package for compact design
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
SOT-23-3 Package
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
This MOSFET is compatible with a variety of electronic circuits and applications that require a small, efficient switching device.
Application Areas
Power management circuits
Switching power supplies
Motor control
Battery-powered devices
Product Lifecycle
The BS870-7-F is an active and readily available product. There are no plans for discontinuation, and replacement or upgrade options are readily available from the manufacturer.
Key Reasons to Choose
Excellent power efficiency due to low on-resistance
Wide operating voltage range for versatility
Small surface mount package for compact designs
Reliable performance within a wide temperature range
RoHS compliance for environmentally conscious applications
BS850-7-FDiodes Incorporated