Manufacturer Part Number
BCX5616QTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
High Power Handling Capability: 2W
High Voltage Capability: 80V Collector-Emitter Breakdown Voltage
High Current Capability: 1A Collector Current
High Frequency Performance: 150MHz Transition Frequency
Excellent Electrical Characteristics: High DC Current Gain, Low Saturation Voltage
Product Advantages
Robust design for high power, high voltage, and high current applications
Suitable for high-frequency circuits with excellent frequency response
Optimized electrical parameters for efficient and reliable operation
Key Technical Parameters
Collector-Emitter Voltage (Breakdown): 80V
Collector Current (Max): 1A
DC Current Gain (hFE): Min. 100 @ 150mA, 2V
Transition Frequency (fT): 150MHz
Quality and Safety Features
RoHS3 Compliant
Suitable for Surface Mount Technology (SMT) assembly
Compatibility
Package: SOT-89-3
Application Areas
Power Amplifiers
Switch-Mode Power Supplies
Automotive Electronics
Industrial Control Systems
Product Lifecycle
Currently in production
Suitable replacement parts available
Key Reasons to Choose This Product
Exceptional power handling, voltage, and current capabilities
High-frequency performance for efficient circuit designs
Reliable and stable electrical characteristics
Compatibility with standard surface mount packaging
Suitable for a wide range of power electronics and industrial applications