BCX5316TA - Diodes Incorporated

Manufacturer Part Number

BCX5316TA

Manufacturer

Diodes Incorporated

Introduction

High-voltage, high-current PNP bipolar junction transistor (BJT)

Product Features and Performance

Designed for high-voltage, high-current applications

Capable of handling up to 80V collector-emitter voltage and 1A collector current

Excellent frequency response up to 150MHz

High DC current gain (hFE) of 100 or more

Low collector-emitter saturation voltage (VCE(sat)) of 500mV @ 50mA, 500mA

Product Advantages

Robust performance in high-power, high-frequency circuits

Suitable for a wide range of applications, including power amplifiers, switches, and drivers

Compact surface mount package (SOT-89-3) for efficient board space utilization

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80V

Collector Current (IC): 1A

DC Current Gain (hFE): 100 (min)

Transition Frequency (fT): 150MHz

Power Dissipation (PD): 1W

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant

Manufactured in accordance with strict quality standards

Compatibility

Compatible with a wide range of electronic circuits and systems that require high-voltage, high-current PNP bipolar transistors

Application Areas

Power amplifiers

Switching circuits

Drivers for various loads

General-purpose high-power, high-frequency applications

Product Lifecycle

The BCX5316TA is an active, in-production product. No immediate plans for discontinuation or replacement, ensuring long-term availability and support.

Key Reasons to Choose This Product

Robust high-voltage, high-current performance for demanding applications

Excellent frequency response up to 150MHz, enabling high-speed operation

High DC current gain for efficient amplification and switching

Low saturation voltage for improved energy efficiency

Compact surface mount package for efficient board space utilization

RoHS3 compliance and high-quality manufacturing for reliability and safety