Manufacturer Part Number
BCM857BS-7-F
Manufacturer
Diodes Incorporated
Introduction
Dual PNP bipolar junction transistor (BJT) array
Product Features and Performance
Operates in the -65°C to 150°C temperature range
Maximum power dissipation of 200mW
Collector-emitter breakdown voltage up to 45V
Collector current up to 100mA
Low collector cutoff current of 15nA (ICBO)
Saturation voltage as low as 400mV @ 5mA, 100mA
DC current gain (hFE) of 220 min @ 2mA, 5V
Transition frequency of 100MHz
Product Advantages
Compact SOT-363 surface mount package
Excellent electrical characteristics and performance
Wide operating temperature range
RoHS3 compliant
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 45V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant
Suitable for lead-free soldering
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in various electronic devices and systems, such as:
- Amplifiers
- Switches
- Logic gates
- Biasing circuits
- Signal processing
Product Lifecycle
Not nearing discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent electrical performance and reliability
Wide operating temperature range
Compact and space-saving surface mount package
RoHS3 compliance for environmentally-friendly applications
Compatibility with a wide range of electronic circuits and devices
BCM857DSFreescale / NXP Semiconductors