Manufacturer Part Number
BC847PN-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Array
Product Features and Performance
RoHS3 Compliant
6-TSSOP, SC-88, SOT-363 Package
Surface Mount Mounting
Operating Temperature Range: -65°C to 150°C
Power Rating: 200mW
Collector-Emitter Breakdown Voltage: 45V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 15nA
Collector-Emitter Saturation Voltage: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Transistor Type: NPN and PNP
DC Current Gain (hFE): 200 @ 2mA, 5V / 220 @ 2mA, 5V
Transition Frequency: 300MHz, 200MHz
Product Advantages
Compact and space-saving design
Reliable and stable performance
Excellent thermal management
Wide operating temperature range
Key Technical Parameters
Power Rating
Voltage Ratings
Current Ratings
Transistor Type
DC Current Gain
Transition Frequency
Quality and Safety Features
RoHS3 Compliant
Reliable and Stable Operation
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Audio amplifiers
Switching circuits
Logic gates
General-purpose amplification
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Compact and space-saving design
Reliable and stable performance
Wide operating temperature range
Excellent thermal management
Compatibility with a wide range of applications