BC847CT-7-F - Diodes Incorporated

Manufacturer Part Number

BC847CT-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Transistor

Product Features and Performance

NPN Bipolar Junction Transistor (BJT)

150 mW Power Dissipation

45 V Collector-Emitter Breakdown Voltage

100 mA Collector Current

15 nA Collector Cutoff Current

600 mV Collector-Emitter Saturation Voltage

420 DC Current Gain

100 MHz Transition Frequency

-55°C to 150°C Operating Temperature Range

Product Advantages

High performance and reliability

Small surface mount package (SOT-523)

RoHS compliant

Key Technical Parameters

Power Dissipation: 150 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current: 100 mA

Collector Cutoff Current: 15 nA

Collector-Emitter Saturation Voltage: 600 mV

DC Current Gain: 420

Transition Frequency: 100 MHz

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable performance in wide temperature range

Compatibility

Compatible with various electronic circuits and systems requiring a high-performance NPN bipolar transistor.

Application Areas

Amplifiers

Switches

Logic gates

General-purpose electronics

Product Lifecycle

The BC847CT-7-F is an active and widely available product. Replacements and upgrades may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High performance and reliability

Small surface mount package

Wide operating temperature range

RoHS compliance

Availability and compatibility with various electronic applications