Manufacturer Part Number
BC847B-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
ROHS3 Compliant
SOT-23-3 package
Operates in temperature range of -65°C to 150°C
Max Power: 300 mW
Max Collector-Emitter Breakdown Voltage: 45 V
Max Collector Current: 100 mA
Max Collector Cutoff Current: 15 nA
Max Collector-Emitter Saturation Voltage: 600 mV @ 5 mA, 100 mA
Min DC Current Gain (hFE): 200 @ 2 mA, 5 V
Transition Frequency: 300 MHz
Surface Mount Mounting
Product Advantages
Compact and reliable SOT-23-3 package
Wide operating temperature range
High power and voltage handling capability
Low collector cutoff current
High current gain
High transition frequency
Key Technical Parameters
Package: SOT-23-3
Collector-Emitter Breakdown Voltage: 45 V
Collector Current: 100 mA
Collector Cutoff Current: 15 nA
Collector-Emitter Saturation Voltage: 600 mV
DC Current Gain: 200
Transition Frequency: 300 MHz
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems requiring a single bipolar junction transistor
Application Areas
Widely used in general purpose amplifier, switching, and logic circuits
Product Lifecycle
Active product with no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Compact and reliable package
Wide operating temperature range
High power and voltage handling
Low collector cutoff current
High current gain
High transition frequency
ROHS3 compliance for environmental safety