Manufacturer Part Number
BC846A-7-F
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT) in a SOT-23-3 package
Product Features and Performance
High frequency performance up to 300 MHz
Low collector-emitter saturation voltage
Low collector-emitter breakdown voltage
High DC current gain
Low collector cutoff current
Wide operating temperature range of -65°C to 150°C
Product Advantages
Suitable for high-frequency amplifier and switching applications
Compact SOT-23-3 package for space-constrained designs
RoHS3 compliant for environmentally friendly use
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 65V
Collector Current (Max): 100mA
Power Dissipation (Max): 300mW
DC Current Gain (Min): 110 @ 2mA, 5V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Typical applications include amplifiers, switches, and logic circuits
Application Areas
Consumer electronics
Industrial controls
Telecommunications equipment
Product Lifecycle
Currently in production
Mature product with available replacements and upgrades
Key Reasons to Choose
High-frequency performance up to 300 MHz
Low collector-emitter saturation voltage for efficient operation
Compact SOT-23-3 package for space-constrained designs
RoHS3 compliance for environmentally friendly use