Manufacturer Part Number
BC817-25-7-F
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT)
NPN transistor
Product Features and Performance
High current handling capability
High frequency operation
Low collector-emitter saturation voltage
Wide operating temperature range
Product Advantages
Suitable for a variety of automotive and industrial applications
Excellent electrical characteristics
RoHS compliant
Key Technical Parameters
Package: SOT-23-3
Operating Temperature: -65°C to 150°C
Power: Max. 310 mW
Collector-Emitter Breakdown Voltage: Max. 45 V
Collector Current: Max. 500 mA
Collector Cutoff Current: Max. 100 nA
Collector-Emitter Saturation Voltage: Max. 700 mV @ 50 mA, 500 mA
DC Current Gain: Min. 160 @ 100 mA, 1 V
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Switching circuits
Amplifier circuits
Product Lifecycle
This product is an active and widely used component.
Replacement and upgrade options are available.
Key Reasons to Choose This Product
High current handling and frequency capability
Low collector-emitter saturation voltage
Wide operating temperature range
Robust design for automotive and industrial use
RoHS compliance and AEC-Q101 qualification
Availability of replacement and upgrade options