BC807-16-7-F - Diodes Incorporated

Manufacturer Part Number

BC807-16-7-F

Manufacturer

Diodes Incorporated

Introduction

Bipolar Junction Transistor (BJT), PNP type

Product Features and Performance

Low collector-emitter saturation voltage

Low collector-emitter breakdown voltage

High DC current gain (hFE)

High transition frequency

Suitable for low power amplifier and switch applications

Product Advantages

Excellent electrical performance

Compact surface mount package

Wide operating temperature range

Key Technical Parameters

Power Max: 310 mW

Voltage Collector Emitter Breakdown (Max): 45 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100 nA

Vce Saturation (Max) @ Ib, Ic: 700 mV @ 50 mA, 500 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 1 V

Frequency Transition: 100 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Industry-standard SOT-23-3 package

Widely used in various electronic circuits and applications

Application Areas

Low power amplifiers

Switches

General-purpose transistor applications

Product Lifecycle

Mature product, no discontinuation plans

Readily available replacements and upgrades

Several Key Reasons to Choose This Product

Excellent electrical performance parameters

Compact and industry-standard package

Wide operating temperature range

RoHS3 compliance for environmental friendliness

Proven reliability and compatibility with various electronic circuits