Manufacturer Part Number
APT13003DU-G1
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
High Voltage: Collector-Emitter Breakdown Voltage up to 450V
High Power: Maximum Power Dissipation of 20W
High Current: Collector Current (Ic) up to 1.5A
Fast Switching Speed: Transition Frequency (fT) of 4MHz
Product Advantages
ROHS3 Compliant
Reliable Performance
Wide Operating Temperature Range (-65°C to 150°C)
Key Technical Parameters
Package: TO-126
Transistor Type: NPN
DC Current Gain (hFE): Minimum 5 @ 1A, 2V
Vce Saturation (Max): 400mV @ 250mA, 1A
Quality and Safety Features
Complies with RoHS Directive
Compatibility
Compatible with TO-126 package
Application Areas
General-purpose amplifier and switching applications
Power supply and control circuits
Industrial and automotive electronics
Product Lifecycle
Active product
Replacement parts and upgrades available
Key Reasons to Choose
High voltage and power handling capability
Reliable and stable performance
Wide operating temperature range
RoHS compliance for environmental safety