Manufacturer Part Number
2N7002K-7
Manufacturer
Diodes Incorporated
Introduction
This is a discrete N-channel MOSFET transistor part of the 2N7002 series.
Product Features and Performance
Designed for general-purpose switching and amplifier applications
Operates within a wide temperature range of -55°C to 150°C
Provides a continuous drain current of 380mA at 25°C
Offers a low on-state resistance (Rds(on)) of 2Ω at 500mA, 10V
Features a maximum gate-source voltage (Vgs) of ±20V
Provides a fast switching speed with a gate charge (Qg) of 0.3nC at 4.5V
Product Advantages
Compact SOT-23-3 surface mount package
RoHS-3 compliant for environmental friendliness
Suitable for a wide range of applications due to its versatile performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 2Ω @ 500mA, 10V
Input Capacitance (Ciss): 50pF @ 25V
Power Dissipation (Max): 370mW
Quality and Safety Features
Compliant with RoHS-3 environmental regulations
Reliable performance and quality assured by Diodes Incorporated
Compatibility
Suitable for a wide range of applications, including general-purpose switching and amplifier circuits
Application Areas
Suitable for various electronic circuits, such as:
- Switching power supplies
- Motor controls
- Voltage regulators
- Amplifier circuits
- General-purpose switching applications
Product Lifecycle
This is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Diodes Incorporated or other MOSFET manufacturers.
Key Reasons to Choose This Product
Reliable and versatile performance across a wide temperature range
Compact and space-saving SOT-23-3 surface mount package
Low on-state resistance for efficient power delivery
RoHS-3 compliance for environmentally friendly applications
Backed by the quality and expertise of Diodes Incorporated