Manufacturer Part Number
2N7002AQ-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs) (Max): ±20V
On-State Resistance (Rds(on)): 5Ω @ 115mA, 10V
Continuous Drain Current (Id) @ 25°C: 180mA
Input Capacitance (Ciss): 23pF @ 25V
Power Dissipation (Max): 370mW
Product Advantages
Automotive and AEC-Q101 qualified
Surface mount package (SOT-23-3)
RoHS3 compliant
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage (Vgs(th)): 2V @ 250μA
Drive Voltage (Rds(on) Max, Min): 5V
Quality and Safety Features
RoHS3 Compliant
Automotive and AEC-Q101 qualified
Compatibility
Standard SOT-23-3 package
Application Areas
Automotive electronics
Consumer electronics
Industrial applications
Product Lifecycle
Current production, no indication of discontinuation
Replacement and upgrade options available
Key Reasons to Choose
Automotive and industrial grade quality
Small surface mount package
Low on-state resistance
High voltage and current handling capability
Broad operating temperature range