2DB1714-13 - Diodes Incorporated

Manufacturer Part Number

2DB1714-13

Manufacturer

Diodes Incorporated

Introduction

This is a bipolar junction transistor (BJT) from Diodes Incorporated.

Product Features and Performance

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 900 mW

Maximum collector-emitter breakdown voltage: 30 V

Maximum collector current: 2 A

Maximum collector cutoff current: 100 nA

Maximum collector-emitter saturation voltage: 370 mV @ 75 mA, 1.5 A

Minimum DC current gain: 270 @ 200 mA, 2 V

Transition frequency: 200 MHz

Product Advantages

Suitable for a wide range of applications due to its high power and current handling capabilities

Stable performance over a wide temperature range

Surface mount package for compact designs

Key Technical Parameters

Transistor type: PNP

Package: SOT-89-3 (TO-243AA)

Packaging: Tape and reel

Quality and Safety Features

RoHS3 compliant

Compatibility

Can be used as a replacement or upgrade for similar bipolar transistors in various electronic circuits and applications.

Application Areas

Switching and amplification circuits

Power supplies

Audio amplifiers

Motor control

Industrial automation

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgraded models may be available in the future.

Several Key Reasons to Choose This Product

Reliable and stable performance across a wide temperature range

High power and current handling capabilities

Compact surface mount package suitable for space-constrained designs

RoHS3 compliance for use in environmentally-friendly applications

Availability of the product and potential for future replacements or upgrades.