Manufacturer Part Number
S34ML08G201BHI000
Manufacturer
Cypress Semiconductor
Introduction
This is a high-capacity NAND flash memory component from Cypress Semiconductor, designed for a wide range of embedded applications.
Product Features and Performance
8Gbit (1G x 8) non-volatile NAND flash memory
Parallel memory interface
Fast write cycle time of 25ns
Wide operating temperature range of -40°C to 85°C
Low operating voltage of 2.7V to 3.6V
Product Advantages
Reliable and high-endurance NAND flash memory
Suitable for space-constrained designs with the compact 63-VFBGA package
Wide temperature range for use in harsh environments
Low power consumption for battery-powered applications
Key Technical Parameters
Memory Type: NAND Flash
Memory Size: 8Gbit
Memory Interface: Parallel
Write Cycle Time: 25ns
Memory Organization: 1G x 8
Package: 63-VFBGA (11x9)
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
Robust 63-VFBGA package for reliable surface mount assembly
Compatibility
This NAND flash memory component is compatible with a wide range of embedded systems and applications that require high-capacity, high-performance non-volatile storage.
Application Areas
Automotive electronics
Industrial automation and control systems
Networking and telecommunication equipment
Consumer electronics and IoT devices
Product Lifecycle
This NAND flash memory component is an actively supported product in Cypress Semiconductor's portfolio. Replacement or upgrade options may be available for future design requirements.
Key Reasons to Choose This Product
High storage capacity of 8Gbit for data-intensive applications
Fast write cycle time of 25ns for efficient data handling
Wide operating temperature range for use in harsh environments
Low power consumption for battery-powered designs
Compact 63-VFBGA package for space-constrained designs
Reliable and high-endurance NAND flash memory technology
RoHS3 compliance for environmentally-friendly applications