Manufacturer Part Number
S34ML02G100TFV000
Manufacturer
Cypress Semiconductor
Introduction
High-performance 2Gbit NAND flash memory
Designed for embedded applications
Product Features and Performance
NAND flash memory with 2Gbit density
Parallel memory interface
25ns write cycle time
Supports word and page write operations
Wide operating temperature range of -40°C to 105°C
Product Advantages
High-capacity storage for embedded systems
Fast write performance for efficient data storage
Wide temperature range for use in diverse environments
Key Technical Parameters
Memory Size: 2Gbit
Memory Interface: Parallel
Write Cycle Time (Word, Page): 25ns
Memory Organization: 256M x 8
Memory Type: Non-Volatile FLASH
Voltage Supply: 2.7V to 3.6V
Quality and Safety Features
RoHS3 compliant
48-TSOP package for surface mount assembly
Compatibility
Suitable for a variety of embedded applications
Application Areas
Embedded systems
Industrial automation
Automotive electronics
Consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade parts may be available
Key Reasons to Choose This Product
High-density 2Gbit NAND flash memory
Fast write performance for efficient data storage
Wide temperature range for use in diverse environments
RoHS3 compliance for environmental responsibility
Suitable for a variety of embedded applications