Manufacturer Part Number
S34ML01G100BHI003
Manufacturer
Infineon Technologies
Introduction
The S34ML01G100BHI003 is a 1Gbit FLASH NAND memory device designed for high-performance data storage applications, utilizing a parallel memory interface.
Product Features and Performance
Non-Volatile FLASH memory
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time - Word, Page: 25ns
FLASH - NAND Technology
Memory Format: FLASH
Memory Interface: Parallel
Product Advantages
Large storage capacity
Fast write cycle time enhances device performance
Resilient to environmental conditions with a wide operating temperature range
Key Technical Parameters
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time - Word, Page: 25ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Designed for robust performance in extreme temperature conditions
Compatibility
Suitable for applications needing a parallel memory interface and high-density FLASH memory
Application Areas
Ideal for high-performance data storage in embedded systems, telecommunications, and industrial applications
Product Lifecycle
Discontinued at Digi-Key
Potential need to look for replacements or upgrades due to discontinuation
Several Key Reasons to Choose This Product
High storage capacity of 1Gbit suitable for intensive data storage needs
Fast write cycle time ensuring quick data processing
Reliable operation in extreme temperatures from -40°C to 85°C
Compatibility with systems requiring high-density NAND FLASH memory
Non-volatile memory type ensures data integrity after power loss.
S34ML01G100BHI00Spansion (Cypress Semiconductor)
S34DG6AOIRIGBT Module