Manufacturer Part Number
CY7C136E-55NXC
Manufacturer
Cypress Semiconductor
Introduction
High-performance, dual-port, asynchronous SRAM (Static Random Access Memory)
Designed for applications requiring fast and efficient data transfer
Product Features and Performance
16Kbit memory capacity
2K x 8 memory organization
55ns access time
5V to 5.5V operating voltage
0°C to 70°C operating temperature range
55ns write cycle time for word and page
Product Advantages
Dual-port architecture for concurrent read and write operations
Asynchronous operation for simplified system design
Low power consumption
High speed and reliability
Key Technical Parameters
Memory type: Volatile SRAM
Memory interface: Parallel
Mounting type: Surface mount
Package: 52-PQFP (10x10)
Quality and Safety Features
RoHS3 compliant
Cypress Semiconductor quality and reliability
Compatibility
Compatible with a wide range of electronic systems and devices requiring high-performance, dual-port SRAM
Application Areas
Telecommunications equipment
Industrial automation and control systems
Embedded systems
Data buffering and caching applications
Product Lifecycle
The CY7C136E-55NXC is an active, in-production product from Cypress Semiconductor.
Replacement or upgrade options may be available, depending on the specific application requirements.
Key Reasons to Choose This Product
High-performance dual-port SRAM for efficient data transfer
Asynchronous operation for simplified system design
Low power consumption and wide operating temperature range
Cypress Semiconductor's quality and reliability
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