Manufacturer Part Number
CY7B135-35JC
Manufacturer
infineon-technologies
Introduction
The CY7B135-35JC is a 32Kbit Dual Port SRAM (Static Random Access Memory) device with asynchronous operation. It features high-performance with a 35ns access time and write cycle time. This SRAM is suitable for a wide range of applications that require fast, reliable data storage and retrieval.
Product Features and Performance
32Kbit Dual Port SRAM
Asynchronous SRAM with 35ns access time and write cycle time
Parallel memory interface
Operates on 4.5V to 5.5V supply voltage
Operating temperature range of 0°C to 70°C
Surface mount 52-LCC (J-Lead) package
Product Advantages
Dual port design allows for simultaneous read and write operations
High-performance with fast access and write cycle times
Low power consumption
Wide temperature range for versatile applications
Key Reasons to Choose This Product
Reliable and high-quality SRAM solution from a trusted manufacturer, Infineon Technologies
Ideal for applications requiring fast and efficient data storage and retrieval
Dual port architecture enables advanced system designs
Wide operating voltage and temperature range ensure compatibility with diverse system requirements
Quality and Safety Features
Tested and qualified to meet industry standards for reliability and performance
Robust packaging and design for long-term reliable operation
Compatibility
The CY7B135-35JC is compatible with a wide range of electronic systems and devices that require high-speed, dual-port SRAM.
Application Areas
Embedded systems
Industrial automation and control
Telecommunications equipment
Military and aerospace applications
Medical devices
Networking and communications equipment
Product Lifecycle
The CY7B135-35JC is an active product, and our website's sales team continues to manufacture and support this model. There are no immediate plans for discontinuation. Customers are advised to contact our website's sales team for information on any potential alternative or equivalent models that may become available in the future.