Manufacturer Part Number
BAR6503WE6327HTSA1
Manufacturer
Infineon Technologies
Introduction
The BAR6503WE6327HTSA1 is a high-performance PIN diode from Infineon Technologies. This diode is designed for use in various RF applications, offering excellent performance characteristics and a compact packaging.
Product Features and Performance
PIN diode structure for high-performance RF applications
Peak reverse voltage of 30V
Maximum current rating of 100mA
Low capacitance of 0.8pF at 3V, 1MHz
Low resistance of 900mOhm at 10mA, 100MHz
Maximum power dissipation of 250mW
Operating temperature range up to 150°C (TJ)
Compact SC-76, SOD-323 package
Product Advantages
Reliable and stable performance in RF circuits
Compact size for space-constrained applications
Suitable for a wide range of operating conditions
Key Reasons to Choose This Product
Excellent RF performance characteristics
Robust and reliable design for demanding applications
Compact packaging for efficient board layout
Wide operating temperature range
Quality and Safety Features
Manufactured to high quality standards by Infineon Technologies
Meets relevant safety and regulatory requirements
Compatibility
This PIN diode is compatible with a variety of RF circuits and can be used in applications such as:
RF switches
Attenuators
Limiters
Phase shifters
Application Areas
Wireless communications
Radar systems
Test and measurement equipment
Industrial and medical electronics
Product Lifecycle
The BAR6503WE6327HTSA1 is an active product from Infineon Technologies. There are no known equivalent or alternative models currently available. If you have any further questions or require more information, please contact our sales team through our website.