Manufacturer Part Number
BAR141E6327HTSA1
Manufacturer
Infineon Technologies
Introduction
The BAR141E6327HTSA1 is a high-performance PIN diode from Infineon Technologies. It is designed for use in radio frequency (RF) applications, offering excellent performance characteristics and reliability.
Product Features and Performance
PIN diode structure for high-performance RF switching and attenuation applications
Operates at a peak reverse voltage of 100V
Handles a maximum current of 140mA
Extremely low capacitance of 0.5pF at 50V, 1MHz
Very low series resistance of 12Ohm at 10mA, 100MHz
Maximum power dissipation of 250mW
Wide operating temperature range up to 150°C (TJ)
Product Advantages
Excellent RF switching and attenuation capabilities
Compact and space-saving TO-236-3, SC-59, SOT-23-3 package
Robust design for reliable performance in harsh environments
Cost-effective solution for various RF applications
Key Reasons to Choose This Product
Superior RF performance characteristics
Robust and reliable design for long-lasting operation
Compact and space-saving packaging
Cost-effective solution for diverse RF applications
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry safety standards
Compatibility
Suitable for use in a wide range of RF applications, such as wireless communications, radar systems, and test and measurement equipment
Application Areas
Wireless communications
Radar systems
Test and measurement equipment
RF switching and attenuation applications
Product Lifecycle
["The BAR141E6327HTSA1 is an obsolete product, meaning it is no longer in active production.","There may be equivalent or alternative models available from Infineon Technologies or other manufacturers. Customers are advised to contact our website's sales team for more information on current product offerings and available alternatives."]