Manufacturer Part Number
TDB6HK360N16P
Manufacturer
Infineon Technologies
Introduction
This is a high-power IGBT (Insulated-Gate Bipolar Transistor) module from Infineon Technologies, designed for industrial and power electronics applications.
Product Features and Performance
High voltage rating of up to 1600V
High current handling capability of up to 360A
Integrated NTC thermistor for temperature monitoring
Optimized for high-efficiency power conversion
Robust and reliable design for industrial environments
Product Advantages
Excellent thermal performance and power density
High switching speed and low conduction losses
Compact and integrated module design
Ease of installation and integration
Key Technical Parameters
Operating temperature range: -40°C to 130°C
Power dissipation: 20 mW
Input configuration: Standard, 3 independent
Quality and Safety Features
Rigorous quality control and testing
Adherence to industry safety standards
Compatibility
Suitable for a wide range of industrial and power electronics applications
Application Areas
Motor drives
Power inverters
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This IGBT module is an actively supported product in Infineon's portfolio.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Robust and reliable performance for demanding industrial environments
High power density and efficiency for improved system design
Ease of integration and installation
Extensive technical support and product lifecycle management from Infineon