Manufacturer Part Number
SPU01N60C3
Manufacturer
Infineon Technologies
Introduction
The SPU01N60C3 is a single N-channel power MOSFET from Infineon Technologies, part of the CoolMOS series.
Product Features and Performance
600V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
On-state resistance (Rds(on)) of 6Ω at 500mA, 10V
Continuous drain current (Id) of 800mA at 25°C
Input capacitance (Ciss) of 100pF at 25V
Maximum power dissipation of 11W at Tc
Product Advantages
Low on-state resistance for high efficiency
High voltage handling capability
Stable performance across wide temperature range
Key Technical Parameters
MOSFET technology: N-channel
Threshold voltage (Vgs(th)): 3.9V at 250A
Drive voltage range: 10V
Gate charge (Qg): 5nC at 10V
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C
Compatibility
Compatible with various electronic circuits and power supply designs that require high-voltage, high-efficiency power switching.
Application Areas
Switched-mode power supplies
Motor drives
Industrial electronics
Telecom and network equipment
Product Lifecycle
This product is an active component and not nearing discontinuation. Replacement options and upgrades may be available from Infineon or other MOSFET suppliers.
Key Reasons to Choose
Excellent power efficiency due to low on-state resistance
High voltage capability for a wide range of applications
Reliable performance across wide temperature range
RoHS3 compliance for environmentally-friendly use