Manufacturer Part Number
SPP11N80C3
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - single.
Product Features and Performance
N-channel MOSFET with a maximum drain-to-source voltage of 800V
Maximum gate-to-source voltage of ±20V
Maximum on-state resistance of 450mOhm at 7.1A and 10V gate-to-source voltage
Metal-oxide semiconductor field-effect transistor (MOSFET) technology
Continuous drain current of 11A at 25°C case temperature
Maximum input capacitance of 1600pF at 100V drain-to-source voltage
Maximum power dissipation of 156W at 25°C case temperature
Threshold voltage of 3.9V at 680A drain current
Gate charge of 85nC at 10V gate-to-source voltage
Through-hole mounting
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 450mOhm
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 1600pF
Power Dissipation (Tc): 156W
Threshold Voltage (Vgs(th)): 3.9V
Gate Charge (Qg): 85nC
Quality and Safety Features
Robust metal-oxide semiconductor technology
Suitable for high-voltage, high-current applications
Complies with relevant safety and quality standards
Compatibility
This MOSFET is suitable for a wide range of power electronics applications, including but not limited to:
Switch-mode power supplies
Motor drives
Power inverters
Lighting control
Industrial automation
Application Areas
High-voltage, high-current power electronics
Power conversion and control systems
Industrial and commercial equipment
Automotive and transportation applications
Product Lifecycle
The SPP11N80C3 is an active and currently available product from Infineon Technologies. There are no indications of the product being discontinued or nearing end-of-life. Replacement or upgrade options may be available from Infineon or other MOSFET manufacturers.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power applications
Low on-state resistance for efficient power switching and reduced power losses
Wide operating temperature range for use in diverse environmental conditions
Robust metal-oxide semiconductor technology for reliable performance
Compatibility with a wide range of power electronics applications and systems
