Manufacturer Part Number
SPP08N80C3
Manufacturer
Infineon Technologies
Introduction
High-voltage, low on-resistance N-channel power MOSFET with CoolMOS technology
Product Features and Performance
Designed for high-voltage, high-power switching applications
Very low on-resistance for high efficiency
Fast switching speed
Excellent reverse recovery behavior
Optimized for hard-switching topologies
Product Advantages
Reduced conduction and switching losses
Improved system efficiency
Compact design due to high power density
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 650mΩ @ 5.1A, 10V
Continuous Drain Current (Id): 8A @ 25°C (Tc)
Input Capacitance (Ciss): 1100pF @ 100V
Power Dissipation (Pd): 104W @ 25°C (Tc)
Quality and Safety Features
Suitable for harsh environments
Robust and reliable design
Compliant with relevant safety standards
Compatibility
Suitable for a wide range of high-voltage, high-power switching applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Lighting ballasts
Welding equipment
Industrial and medical equipment
Product Lifecycle
This product is currently in active production
Replacements and upgrades may become available in the future
Several Key Reasons to Choose This Product
Excellent efficiency and power density
Robust and reliable performance
Optimized for hard-switching topologies
Proven CoolMOS technology for superior switching behavior
Wide range of applications in high-voltage, high-power systems
SPP08N80C3 MOSCypress Semiconductor (Infineon Technologies)